Ultimate challenge laser processing in the field of electronics
Laser guided us into a more intelligent in the future.
No laser, the development of the electronic industry will be stalled.
When the limit of the 'small' in order to truly achieve?
If we define 'small' in a very small size, so there will be little more than 'small' things appear?
Nowadays, the smartphone is an endless source of information, we can use them to real time comparing prices, contact with friends, learn unfamiliar field, can also use it to replace the digital camera makes it easy to take pictures.
The future of smartphones what it's like to be?
It may be in your wrist, in your nose, in your ears, even on your retina.
It will in any case closely connected to your body, and even become part of your body, you can use gestures and voice to control it.
This sounds a bit like science fiction, but it has gradually become a reality.
The core of the smart phone chips must become more powerful.
To truly realize the vision of the future, actually not far away.
For the markets, the core of the smart phone chips must become more powerful.
Only the circuit made smaller and has it been possible to implement this vision.
Gordon Moore prediction often refer to the content.
Gordon Moore is one of the founders of Intel, is a pioneer in the world's leading semiconductor research.
As early as in 1965, he realized that the number of transistors on fixed surface area will double every 18 months at a time.
This is known as Moore's law, and promote the development of the industry.
It is a battle, on each square nm chips at a cost of billions of dollars.
However, in order to on semiconductor chip encapsulation more transistors, in simple terms, what we need is: more light!
Ten billion transistors on a chip, a microchip in optical lithography was born.
There, circuit micro image is projected onto silicon wafers, lithography rubber cover.
The abbe resolution limit means that a light source can not copy any smaller than their wavelength structure.
However, this does not mean that this limit is insurmountable.
At present, the working wavelength of 193 nm lithography device, but it can produce 22 nm size structure, far beyond the limits of the abbe resolution, we will this process implemented in a variety of ways.
The birth of a microchip in lithography light, however, with the use of light source, we will slowly but inevitably close to the limit of technical feasibility.
20 years ago, for the sake of carving fine structure in the various levels of the microchip, semiconductor EUV lithography technology arises at the historic moment.
The project aims to 13.
Extreme ultraviolet (5 nm
To develop a stable light source.
Under the help of this technology, it is likely to produce less than 10 nm size structure.
Conversely, this means that more than ten billion transistors could fit on a microchip.
Light in a vacuum in the flashing, however, it is not always easy.
EUV lithography, faces the big challenge is that it needs to produce 13.
5 nm wavelengths of light.
EUV light source must reach hundreds of watts of power can be in the optical system for further processing.
Plasma source so far proved to be the solution.
Plasma by focusing on high intensity laser radiation and high energy discharge, tin and xenon as input materials.
Laser produced plasma (
Have created a precedent.
The idea behind this process at first sounds simple enough.
Tin solder droplet generator to drop 50 KHZ frequency into the vacuum chamber, with these drops rapidly through, laser pulse will hit them.
As a result, the laser can type 50000 tin drop every second.
Tin atom is ionized, and to create a high intensity of plasma.
Collector using multiple reflection configuration, captured by the plasma emission EUV light, will they focus and eventually transferred to lithography system, exposure substrate.
Used in the application of the laser pulse by pulse co2 laser system -
Lead to faster transfer laser amplifier.
The system is based on the cw co2 laser technology, and can work under more than million watts of power.
In five amplifier, only a few watts average power can be a carbon dioxide laser pulse to improve more than 10000 times, will increase more than 30 kw average pulse power.
However, pulse peak power can only reach a few megawatts.
In order to achieve the result of garden full, laser pulse must be in to play in a wide area of tin drop as much as possible.
Tin drop 20 microns in diameter, is smaller than the laser focused spot.
As a result, the laser can't fully transfer the 30 kilowatts of power to tin drops.
In order to achieve this goal, laser amplifier USES a clever way.
Laser processing laser